PREGUNTA A NUESTROS EXPERTOS
(04)2531906
Horario: Lunes a sábado: 10:00 a 18:30, Domingos: 11:00 a 16:00
Memoria Ram Kingston So-dimm Ddr4 4gb 2133 Cl15 260 Pines
Descripción

FEATURES
This document describes ValueRAM's 512M x 64-bit (4GB)
DDR4-2133 CL15 SDRAM (Synchronous DRAM), 1Rx8,
non-ECC, memory module, based on eight 512M x 8-bit FBGA
components. The SPD is programmed to JEDEC standard
latency DDR4-2133 timing of 15-15-15 at 1.2V. This 260-pin
SODIMM uses gold contact fingers. The electrical and
mechanical specifications are as follows:
CL(IDD)
Row Cycle Time (tRCmin)
Refresh to Active/Refresh
Command Time (tRFCmin)
Row Active Time (tRASmin)
Maximum Operating Power
UL Rating
Operating Temperature
Storage Temperature
15 cycles
46.5ns(min.)
260ns(min.)
33ns(min.)
TBD W*
94 V - 0
0o
C to +85o
C
-55o
C to +100o
C
• Power Supply: VDD=1.2V Typical
• VDDQ = 1.2V Typical
• VPP - 2.5V Typical
• VDDSPD=2.2V to 3.6V
• Nominal and dynamic on-die termination (ODT) for
data, strobe, and mask signals
• Low-power auto self refresh (LPASR)
• Data bus inversion (DBI) for data bus
• On-die VREFDQ generation and calibration
• Single-rank
• On-board I2 serial presence-detect (SPD) EEPROM
• 16 internal banks; 4 groups of 4 banks each
• Fixed burst chop (BC) of 4 and burst length (BL) of 8
via the mode register set (MRS)
• Selectable BC4 or BL8 on-the-fly (OTF)
• Fly-by topology
• Terminated control command and address bus
• PCB: Height 1.18” (30.00mm)
• RoHS Compliant and Halogen-Free

Memoria Ram Kingston So-dimm Ddr4 4gb 2133 Cl15 260 PinesMemoria Ram Kingston So-dimm Ddr4 4gb 2133 Cl15 260 Pines
$50.00In stock
Product description:

FEATURES
This document describes ValueRAM's 512M x 64-bit (4GB)
DDR4-2133 CL15 SDRAM (Synchronous DRAM), 1Rx8,
non-ECC, memory module, based on eight 512M x 8-bit FBGA
components. The SPD is programmed to JEDEC standard
latency DDR4-2133 timing of 15-15-15 at 1.2V. This 260-pin
SODIMM uses gold contact fingers. The electrical and
mechanical specifications are as follows:
CL(IDD)
Row Cycle Time (tRCmin)
Refresh to Active/Refresh
Command Time (tRFCmin)
Row Active Time (tRASmin)
Maximum Operating Power
UL Rating
Operating Temperature
Storage Temperature
15 cycles
46.5ns(min.)
260ns(min.)
33ns(min.)
TBD W*
94 V - 0
0o
C to +85o
C
-55o
C to +100o
C
• Power Supply: VDD=1.2V Typical
• VDDQ = 1.2V Typical
• VPP - 2.5V Typical
• VDDSPD=2.2V to 3.6V
• Nominal and dynamic on-die termination (ODT) for
data, strobe, and mask signals
• Low-power auto self refresh (LPASR)
• Data bus inversion (DBI) for data bus
• On-die VREFDQ generation and calibration
• Single-rank
• On-board I2 serial presence-detect (SPD) EEPROM
• 16 internal banks; 4 groups of 4 banks each
• Fixed burst chop (BC) of 4 and burst length (BL) of 8
via the mode register set (MRS)
• Selectable BC4 or BL8 on-the-fly (OTF)
• Fly-by topology
• Terminated control command and address bus
• PCB: Height 1.18” (30.00mm)
• RoHS Compliant and Halogen-Free



Etiquetas:Kingston Memorias Ram



PRODUCTOS RELACIONADOS